半導體產業在摩爾定律的「規範」下,電晶體體積逐漸縮小,單位面積內電晶體的數目不斷以倍數成長,雖然帶來成本效益,但是以矽晶圓為基礎的IC元件設計與製程,將遭遇物理特性的侷限而無法繼續微縮。因此研究人員嘗試以其他材料如SET(Single Electron Transistor)、CNT(Carbon Nanotube Transistor)等取代矽材料,以便可以在相同晶片面積內放入比傳統多出數萬倍的電晶體。
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